SSP7150N 3.6a, 150v, r ds(on) 255 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low r ds(on) trench technology. ? low thermal impedance. ? fast switching speed. applications ? white led boost converters. ? automotive systems. ? industrial dc/dc conversion circuits. package information package mpq leader size sop-8pp 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v continuous drain current 1 t a =25c i d 3.6 a t a =70c 2.9 pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 6.2 a power dissipation 1 t a =25c p d 5 w t a =70c 3.2 operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance data maximum junction to ambient 1 t Q 10 sec r ja 25 c / w steady state 65 notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 1.00 1.10 0 12 b 5.70 5.80 b 0.33 0.51 c 0.20 0.30 d 1.27bsc d 3.61 3.98 e 1.35 1.75 e 5.40 6.10 g 1.10 - f 0.08 0.20 g 3.60 3.99 sop-8pp b e f g g a e b d c d
SSP7150N 3.6a, 150v, r ds(on) 255 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) paramete r s y mbol min t y p max unit test condition static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 10 na v ds =0, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds =120v, v gs =0 - - 10 v ds =120v, v gs =0,t j =55c on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 255 m ? v gs =10v, i d =2.9a - - 290 v gs =4.5v, i d =2.7a forward transconductance 1 g fs - 10 - s v ds =15v, , i d =2.9a diode forward voltage v sd - 0.76 - v i s =3.1a, v gs =0 dynamic 2 total gate charge q g - 10.8 - nc i d =2.9a v ds =75v v gs =4.5v gate-source charge q gs - 3.3 - gate-drain charge q gd - 5.6 - turn-on delay time td (on) - 10.1 - ns i d =2.9a, v dd =75v v gen =10v r l =25.9 ? , r gen =6 ? rise time t r - 10 - turn-off delay time td (off) - 50 - fall time t f - 22 - input capacitance c iss - 848 - pf v ds =15v, v gs =0, f=1mhz output capacitance c oss - 69 - reverse transfer capacitance c rss - 29 - notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
SSP7150N 3.6a, 150v, r ds(on) 255 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics curve
SSP7150N 3.6a, 150v, r ds(on) 255 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics curve
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